Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, I. Adesida
{"title":"采用Ir-gate和ag -欧姆接触技术的热稳定增强模式和耗尽模式InAlAs/InGaAs/InP hemt的单片集成","authors":"Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, I. Adesida","doi":"10.1109/IEDM.2006.346855","DOIUrl":null,"url":null,"abstract":"This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies\",\"authors\":\"Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, I. Adesida\",\"doi\":\"10.1109/IEDM.2006.346855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346855\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文报道了一种基于Ir-gate和ag -欧姆接触技术的热稳定InAlAs/InGaAs/InP E/ d - hemt单片集成的新工艺。在钝化后，采用SiNx层对Ir-gate和ag -欧姆触点同时退火。两种栅极长度均为0.2 μ m的集成E/ d - hemt均具有优异的直流和射频特性
Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies
This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
