N. Mathur, Y. Ahn, I. Kouznetov, F. Jenne, J. Fulford
{"title":"基于p型和n型衬底抗熔丝栅氧化物击穿的一次性编程器件成品率研究","authors":"N. Mathur, Y. Ahn, I. Kouznetov, F. Jenne, J. Fulford","doi":"10.1109/IRWS.2005.1609576","DOIUrl":null,"url":null,"abstract":"A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield with increasing anti-fuse gate read current can be obtained with the OTP device based on anti-fuse gate oxide breakdown on n-type substrate compared to p-type substrate due to less electron-hole pair generation.","PeriodicalId":214130,"journal":{"name":"2005 IEEE International Integrated Reliability Workshop","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates\",\"authors\":\"N. Mathur, Y. Ahn, I. Kouznetov, F. Jenne, J. Fulford\",\"doi\":\"10.1109/IRWS.2005.1609576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield with increasing anti-fuse gate read current can be obtained with the OTP device based on anti-fuse gate oxide breakdown on n-type substrate compared to p-type substrate due to less electron-hole pair generation.\",\"PeriodicalId\":214130,\"journal\":{\"name\":\"2005 IEEE International Integrated Reliability Workshop\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Integrated Reliability Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2005.1609576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Integrated Reliability Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2005.1609576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates
A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield with increasing anti-fuse gate read current can be obtained with the OTP device based on anti-fuse gate oxide breakdown on n-type substrate compared to p-type substrate due to less electron-hole pair generation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
