T. Ohguro, K. Kojima, H. Momose, S. Nitta, T. Fukuda, T. Enda, Y. Toyoshima
{"title":"未来混合模拟数字应用中高电阻率衬底的改进","authors":"T. Ohguro, K. Kojima, H. Momose, S. Nitta, T. Fukuda, T. Enda, Y. Toyoshima","doi":"10.1109/VLSIT.2002.1015432","DOIUrl":null,"url":null,"abstract":"Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the passage of high frequency signals through the substrate in resistors. Thus, HRS with FOP & additional implantation is effective for future mixed signal CMOS with RF circuits.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"253 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Improvement of high resistivity substrate for future mixed analog-digital applications\",\"authors\":\"T. Ohguro, K. Kojima, H. Momose, S. Nitta, T. Fukuda, T. Enda, Y. Toyoshima\",\"doi\":\"10.1109/VLSIT.2002.1015432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the passage of high frequency signals through the substrate in resistors. Thus, HRS with FOP & additional implantation is effective for future mixed signal CMOS with RF circuits.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"253 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of high resistivity substrate for future mixed analog-digital applications
Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the passage of high frequency signals through the substrate in resistors. Thus, HRS with FOP & additional implantation is effective for future mixed signal CMOS with RF circuits.
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