基于增益的细胞延迟建模

S. Nazarian, Massoud Pedram
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引用次数: 0

摘要

传统的单元延迟建模方法计算CMOS逻辑单元的传播延迟和输出过渡时间,该方法是通过用饱和斜坡信号近似该噪声波形,然后利用单元库延迟查找表报告输出时序信息。然而,将输入波形建模为饱和斜坡可能会导致感兴趣的时序参数出现显著误差,因为实际输出波形可能与简单的饱和斜坡输入所隐含的波形非常不同。因此,本文提出了gcdm,一种基于增益的单元延迟建模技术,用于在噪声输入波形下精确计算CMOS逻辑单元的电输出波形。gcdm的主要贡献是它直接计算逻辑单元的输出波形,而不需要近似输入波形。实际上,gcdm需要对库中的每个单元进行新的预表征过程,从而构建一个小信号增益查找表。这种基于查找表的方法与现有的计时分析工具兼容。Spice模拟结果证实了我们方法的高精度
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Gain-based Cell Delay Modeling
Conventional cell delay modeling approaches calculate the propagation delay and output transition time of a CMOS logic cell, which is subjected to a noisy input waveform, by approximating this noisy waveform with a saturated ramp signal and then utilizing cell library delay look-up tables to report the output timing information. Modeling the input waveform as a saturated ramp may however result in significant error in the timing parameters of interest because the actual output waveform can be very different from the one that is implied by a simple saturated ramp input. This paper therefore presents, gcdm, a gain-based cell delay modeling technique for accurate computation of the electrical output waveform of a CMOS logic cell under a noisy input waveform. The key contribution of gcdm is that it directly calculates the output waveform of the logic cell without the need to approximate the input waveform. In effect, gcdm requires a new pre-characterization process for each cell in the library, resulting in construction of a small-signal gain lookup table. This lookup table-based approach is compatible with the existing timing analysis tools. The high accuracy of our approach is confirmed by Spice simulations
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