{"title":"非易失性存储器的演变和革命","authors":"P. Cappelletti","doi":"10.1109/IEDM.2015.7409666","DOIUrl":null,"url":null,"abstract":"For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"71","resultStr":"{\"title\":\"Non volatile memory evolution and revolution\",\"authors\":\"P. Cappelletti\",\"doi\":\"10.1109/IEDM.2015.7409666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"71\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
For over 40 years, the evolution of Non Volatile Memories has been mostly based on the floating gate MOS transistor. We have successfully succeeded in scaling this wonderful device below 20nm but we are now approaching the limit. It is time for disruptive innovations, either integrating the same basic device in a vertical structure or moving to totally different device concepts. This paper analyzes the different alternatives in relation to their areas of application.
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