{"title":"InP中少数载流子扩散长度和边缘表面复合速度","authors":"R. Hakimzadeh, S. Bailey","doi":"10.1109/ICIPRM.1993.380613","DOIUrl":null,"url":null,"abstract":"A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V/sub s/). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L/sub n/).<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Minority carrier diffusion length and edge surface-recombination velocity in InP\",\"authors\":\"R. Hakimzadeh, S. Bailey\",\"doi\":\"10.1109/ICIPRM.1993.380613\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V/sub s/). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L/sub n/).<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380613\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Minority carrier diffusion length and edge surface-recombination velocity in InP
A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V/sub s/). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L/sub n/).<>
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