Y. Q. Wang, D. Gao, W. Hwang, C. Shen, Gang Zhang, G. Samudra, Y. Yeo, W. Yoo
{"title":"具有HfO2高k俘获层和Si3N4/SiO2隧道堆叠的快速擦除和高可靠的MONOS型存储器","authors":"Y. Q. Wang, D. Gao, W. Hwang, C. Shen, Gang Zhang, G. Samudra, Y. Yeo, W. Yoo","doi":"10.1109/IEDM.2006.346948","DOIUrl":null,"url":null,"abstract":"A Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO <sub>2</sub> charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si<sub>3</sub>N<sub>4</sub> in place of a part of the SiO<sub>2</sub> tunneling layer resulted in fast program and erase (P/E) speed and small V<sub>th</sub> shift over 104 endurance cycles","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and Si3N4/SiO2 tunneling stack\",\"authors\":\"Y. Q. Wang, D. Gao, W. Hwang, C. Shen, Gang Zhang, G. Samudra, Y. Yeo, W. Yoo\",\"doi\":\"10.1109/IEDM.2006.346948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO <sub>2</sub> charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si<sub>3</sub>N<sub>4</sub> in place of a part of the SiO<sub>2</sub> tunneling layer resulted in fast program and erase (P/E) speed and small V<sub>th</sub> shift over 104 endurance cycles\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and Si3N4/SiO2 tunneling stack
A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO 2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N4 in place of a part of the SiO2 tunneling layer resulted in fast program and erase (P/E) speed and small Vth shift over 104 endurance cycles
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