高阻体STI NDeMOS:经过优化的DeMOS器件，可实现移动电流灯丝，实现强大的ESD保护

2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI:10.1109/IRPS.2009.5173344

M. Shrivastava, J. Schneider, M. Baghini, H. Gossner, V. Rao

{"title":"高阻体STI NDeMOS:经过优化的DeMOS器件，可实现移动电流灯丝，实现强大的ESD保护","authors":"M. Shrivastava, J. Schneider, M. Baghini, H. Gossner, V. Rao","doi":"10.1109/IRPS.2009.5173344","DOIUrl":null,"url":null,"abstract":"A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection\",\"authors\":\"M. Shrivastava, J. Schneider, M. Baghini, H. Gossner, V. Rao\",\"doi\":\"10.1109/IRPS.2009.5173344\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173344\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

提出了一种改进接地栅极(gg) NMOS结构主体和源区域的新型ESD保护DeMOS器件。详细的3D模拟表明，由于移动电流细丝和栅极氧化物击穿的自我保护，即使对于快速瞬态，也具有很高的故障阈值。详细讨论了二垒发射和运动细丝的物理特性。

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Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection

A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.

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2009 IEEE International Reliability Physics Symposium

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