性价比高、性能好的LSTP CMISpolysi /HfSiON nMIS和polysi /TiN/HfSiON pMIS

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.347009

T. Hayashi, Y. Nishida, S. Sakashita, M. Mizutani, S. Yamanari, M. Higashi, T. Kawahara, M. Inoue, J. Yugami, J. Tsuchimoto, K. Shiga, N. Murata, H. Sayama, T. Yamashita, H. Oda, T. Kuroi, T. Eimori, Y. Inoue

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引用次数: 3

摘要

研究了具有多硅/TiN混合栅极和高k介电介质的高性能LSTP cmisfet。NMIS用原位掺磷多晶硅栅极和PMIS用TiN金属栅极成功地抑制了栅极损耗。pMIS的Vth控制是通过在衬底注入氟来实现的。优化HfSiON形成和TiN去除工艺是实现高可靠性的关键。结果表明，这种低成本的工艺提供了与现有双金属CMOS相竞争的性能

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Cost Worthy and High Performance LSTP CMIS; Poly-Si/HfSiON nMIS and Poly-Si/TiN/HfSiON pMIS

High performance LSTP CMISFETs with poly-Si/TiN hybrid gate and high-k dielectric have been studied. Gate depletion is successfully suppressed by in-situ phosphorus doped poly-Si gate for NMIS and by TiN metal gate for PMIS. Vth control for pMIS is accomplished by fluorine implantation into substrate. Optimization of HfSiON formation and TiN removal process is the key to achieve high-reliability. It is demonstrated that this cost-worthy process provides performance which is competitive to reported dual metal CMOS

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2006 International Electron Devices Meeting

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