利用二维光谱成像表征亚微米器件上EOS诱导缺陷

2005 IEEE International Integrated Reliability Workshop Pub Date : 2005-10-17 DOI:10.1109/IRWS.2005.1609580

M. Bailon, P. Salinas, J.S. Arboleda, J. Miranda

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摘要

在亚微米器件中发现的eos诱导缺陷的定位，识别和表征证明了一种新的FA程序。利用红外光子发射和电路分析进行缺陷定位，利用光子发射的光谱轮廓进行缺陷指纹分析。最后，采用正面和背面FA方法确定了所分析装置的实际失效机理

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Characterization of EOS induced defects on submicron devices using 2D spectral imaging

Localization, identification and characterization of EOS-induced defects found in submicron devices were demonstrated using a new FA procedure. IR photon emission and circuit analysis were used for defect localization while spectral profile of photon emission was utilized for defect finger-printing analysis. Finally, frontside and backside FA methods were done to confirm the actual failure mechanism in the device under analysis

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2005 IEEE International Integrated Reliability Workshop

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