低压CMP用于300mm超低k (k=1.6-1.8)/Cu集成

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269187

S. Kondo, B. Yoon, S. Tokitoh, K. Misawa, S. Sone, H.J. Shin, N. Ohashi, N. Kobayashi

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引用次数: 12

摘要

在45纳米技术节点上，采用低压CMP和虚拟模式技术，首次成功地将多孔MSQ(甲基硅氧烷)(k<1.6-1.8)和有机聚合物薄膜组成的混合结构低k ILDs(线间介电体)的多级Cu双damascene互连集成在300 mm晶圆上，这支持了超低k薄膜的不良力学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-pressure CMP for 300-mm ultra low-k (k=1.6-1.8)/Cu integration

Toward the 45 nm technology node, multilevel Cu dual-damascene interconnects with hybrid-structure low-k ILDs (inter-line dielectrics) consisting of porous MSQ (methyl silsesquioxane) (k<1.6-1.8) and organic polymer films are successfully integrated on 300 mm wafers for the first time with a low-pressure CMP and dummy pattern technology, which supports the poor mechanical properties of ultra low-k films.

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