Characteristics of inductively coupled plasma radio-frequency ion source of ion implanters for high number density dopant generation

In this study, we developed an inductively coupled plasma ion source that can be applied to implanters in semiconductor production. We employed an infrared camera and thermocouples to assess the temperature properties of the ion source operated at temperatures below 500 °C. This reduced temperature is expected to facilitate the adoption of various materials as the ion source. Ion densities of the direct current ion source measured using a double Langmuir probe were found to range from 1.66 × 10¹⁶ to 5.06 × 10¹⁶ m⁻³ within an input power range of 682–895 W. In contrast, the ion densities of a radio-frequency ion source ranged from 7.86 × 10¹⁶–9.58 × 10¹⁶ m⁻³ within an input power range of 700–900 W. This proposed ion source can serve as a next-generation solution because of its low operating temperature and high ion density.