{"title":"基于碲化镉汞的焦平面阵列的热压焊接性能","authors":"Anand Singh, Vijay Singh Meena, Ravinder Pal","doi":"10.1016/j.microrel.2024.115476","DOIUrl":null,"url":null,"abstract":"<div><p>HgCdTe based infrared focal plane array (IRFPA) continues to be the best performing sensor for imaging infrared seeker systems. A detailed study on the flip chip bonding is described for an improvement in the performance and reliability of FPA under stringent thermal and mechanical cycling load. HgCdTe material has a limitation in the bonding temperature and pressure to preserve the detector performance. Process of thermo-compression bonding is developed here for a large format HgCdTe detector array with ultra-fine pitch. Flip-chip bonding under ultra-low force of 4.6 × 10<sup>−4</sup> N/bump is achieved with minimum residual stress and it protects the HgCdTe photo-diodes from dislocation circuit multiplication after hybridization. This thermo-compression process is directly usable for other materials such as InSb, T2SL and InGaAs etc. with due consideration of the material's properties like Young's modulus, coefficient of thermal expansion, Poisson ratio and mechanical strength. HgCdTe FPAs with the optimum bonding parameters are packed in detector-dewar-cooler-assembly (DDCA) and tested for stringent thermal shock, mechanical shock and random vibration process. The fatigue life of 10<sup>4</sup> thermal cycles is achieved to make suitable for fail safe operation. HgCdTe FPA will have a life span of 13 years (if it is cooled down twice on each day) which is more than the vacuum integrity shelf life of a sealed DDCA.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"160 ","pages":"Article 115476"},"PeriodicalIF":1.6000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance of thermo-compression bonding for HgCdTe based focal plane array\",\"authors\":\"Anand Singh, Vijay Singh Meena, Ravinder Pal\",\"doi\":\"10.1016/j.microrel.2024.115476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>HgCdTe based infrared focal plane array (IRFPA) continues to be the best performing sensor for imaging infrared seeker systems. A detailed study on the flip chip bonding is described for an improvement in the performance and reliability of FPA under stringent thermal and mechanical cycling load. HgCdTe material has a limitation in the bonding temperature and pressure to preserve the detector performance. Process of thermo-compression bonding is developed here for a large format HgCdTe detector array with ultra-fine pitch. Flip-chip bonding under ultra-low force of 4.6 × 10<sup>−4</sup> N/bump is achieved with minimum residual stress and it protects the HgCdTe photo-diodes from dislocation circuit multiplication after hybridization. This thermo-compression process is directly usable for other materials such as InSb, T2SL and InGaAs etc. with due consideration of the material's properties like Young's modulus, coefficient of thermal expansion, Poisson ratio and mechanical strength. HgCdTe FPAs with the optimum bonding parameters are packed in detector-dewar-cooler-assembly (DDCA) and tested for stringent thermal shock, mechanical shock and random vibration process. The fatigue life of 10<sup>4</sup> thermal cycles is achieved to make suitable for fail safe operation. HgCdTe FPA will have a life span of 13 years (if it is cooled down twice on each day) which is more than the vacuum integrity shelf life of a sealed DDCA.</p></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"160 \",\"pages\":\"Article 115476\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424001562\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001562","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Performance of thermo-compression bonding for HgCdTe based focal plane array
HgCdTe based infrared focal plane array (IRFPA) continues to be the best performing sensor for imaging infrared seeker systems. A detailed study on the flip chip bonding is described for an improvement in the performance and reliability of FPA under stringent thermal and mechanical cycling load. HgCdTe material has a limitation in the bonding temperature and pressure to preserve the detector performance. Process of thermo-compression bonding is developed here for a large format HgCdTe detector array with ultra-fine pitch. Flip-chip bonding under ultra-low force of 4.6 × 10−4 N/bump is achieved with minimum residual stress and it protects the HgCdTe photo-diodes from dislocation circuit multiplication after hybridization. This thermo-compression process is directly usable for other materials such as InSb, T2SL and InGaAs etc. with due consideration of the material's properties like Young's modulus, coefficient of thermal expansion, Poisson ratio and mechanical strength. HgCdTe FPAs with the optimum bonding parameters are packed in detector-dewar-cooler-assembly (DDCA) and tested for stringent thermal shock, mechanical shock and random vibration process. The fatigue life of 104 thermal cycles is achieved to make suitable for fail safe operation. HgCdTe FPA will have a life span of 13 years (if it is cooled down twice on each day) which is more than the vacuum integrity shelf life of a sealed DDCA.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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