Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures

Abstract

The mechanism of resistive switching in Pt/HfO₂(8 nm)/HfO_XN_Y(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.