Zhimei Yang , Yun Li , Mingmin Huang , Min Gong , Yao Ma
{"title":"利用深层次瞬态光谱分析用湍流重离子辐照的 n 型 4H-SiC 肖特基势垒二极管中缺陷的演变过程","authors":"Zhimei Yang , Yun Li , Mingmin Huang , Min Gong , Yao Ma","doi":"10.1016/j.microrel.2024.115532","DOIUrl":null,"url":null,"abstract":"<div><div>The evolution of deep levels in n-type 4H-SiC Schottky barrier diodes (SBDs) irradiated with 9.5 MeV/u <sup>209</sup>Bi ions at room temperature was investigated by Deep Level Transient Spectroscopy (DLTS). DLTS scans from 40 K to 800 K indicated the presence of <em>EN</em><sub><em>1</em></sub><em>, EH</em><sub><em>Ti(h)</em></sub> (<em>E</em><sub><em>C</em></sub>-0.13(1) eV), <em>EH</em><sub><em>1</em></sub>(<em>E</em><sub><em>C</em></sub>-0.48(2) eV), <em>EH</em><sub><em>4</em></sub> (<em>E</em><sub><em>C</em></sub>-0.97(3)eV), and <em>EH</em><sub><em>6/7</em></sub> (<em>E</em><sub><em>C</em></sub><em>-</em>1.60(1) eV) defects levels within the energy range from 0.12 to 1.6 eV below the conduction band edge (<em>E</em><sub><em>C</em></sub>). The DLTS results for the 4H-SiC SBD samples before and after irradiation clearly demonstrated that swift heavy ion (SHI) irradiation induced the evolution of deep level defects or defect states in 4H-SiC SBD device. Notably, at a fluence of 1 × 10<sup>11</sup> ions/cm<sup>2</sup>, the ion-induced deep level defects or defect states exhibited significant recovery due to the cumulative effect of heat, leading to SiC re-crystallization.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"163 ","pages":"Article 115532"},"PeriodicalIF":1.6000,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy\",\"authors\":\"Zhimei Yang , Yun Li , Mingmin Huang , Min Gong , Yao Ma\",\"doi\":\"10.1016/j.microrel.2024.115532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The evolution of deep levels in n-type 4H-SiC Schottky barrier diodes (SBDs) irradiated with 9.5 MeV/u <sup>209</sup>Bi ions at room temperature was investigated by Deep Level Transient Spectroscopy (DLTS). DLTS scans from 40 K to 800 K indicated the presence of <em>EN</em><sub><em>1</em></sub><em>, EH</em><sub><em>Ti(h)</em></sub> (<em>E</em><sub><em>C</em></sub>-0.13(1) eV), <em>EH</em><sub><em>1</em></sub>(<em>E</em><sub><em>C</em></sub>-0.48(2) eV), <em>EH</em><sub><em>4</em></sub> (<em>E</em><sub><em>C</em></sub>-0.97(3)eV), and <em>EH</em><sub><em>6/7</em></sub> (<em>E</em><sub><em>C</em></sub><em>-</em>1.60(1) eV) defects levels within the energy range from 0.12 to 1.6 eV below the conduction band edge (<em>E</em><sub><em>C</em></sub>). The DLTS results for the 4H-SiC SBD samples before and after irradiation clearly demonstrated that swift heavy ion (SHI) irradiation induced the evolution of deep level defects or defect states in 4H-SiC SBD device. Notably, at a fluence of 1 × 10<sup>11</sup> ions/cm<sup>2</sup>, the ion-induced deep level defects or defect states exhibited significant recovery due to the cumulative effect of heat, leading to SiC re-crystallization.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"163 \",\"pages\":\"Article 115532\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424002129\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002129","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy
The evolution of deep levels in n-type 4H-SiC Schottky barrier diodes (SBDs) irradiated with 9.5 MeV/u 209Bi ions at room temperature was investigated by Deep Level Transient Spectroscopy (DLTS). DLTS scans from 40 K to 800 K indicated the presence of EN1, EHTi(h) (EC-0.13(1) eV), EH1(EC-0.48(2) eV), EH4 (EC-0.97(3)eV), and EH6/7 (EC-1.60(1) eV) defects levels within the energy range from 0.12 to 1.6 eV below the conduction band edge (EC). The DLTS results for the 4H-SiC SBD samples before and after irradiation clearly demonstrated that swift heavy ion (SHI) irradiation induced the evolution of deep level defects or defect states in 4H-SiC SBD device. Notably, at a fluence of 1 × 1011 ions/cm2, the ion-induced deep level defects or defect states exhibited significant recovery due to the cumulative effect of heat, leading to SiC re-crystallization.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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