Transient Negative Capacitance as Cause of Reverse Drain-induced Barrier Lowering and Negative Differential Resistance in Ferroelectric FETs

We have investigated transient $I_{\text{d}}-V_{\text{g}}$ and $I_{\text{d}}-V_{\text{d}}$ characteristics of ferroelectric FET (FeFET) by simulation with ferroelectric (FE) model considering polarization switching dynamics. For the first time, we show transient negative capacitance (TNC) with polarization reversal and depolarization effect results in sub-60 SS, reverse drain-induced barrier lowering (R-DIBL), and negative differential resistance (NDR) without traversing the quasi-static negative capacitance (QSNC) region in S-shaped P-Vbased on Landau theory. The mechanism demonstrated in this work can be a possible explanation for the previously reported negative capacitance FET (NCFET) with steep SS, R-DIBL, and NDR.