{"title":"一个1.25 gbaud的CMOS收发器，带有片上终止器和电压模式驱动器，用于千兆以太网1000Base-X","authors":"Gijung Ahn, D. Jeong","doi":"10.1109/ICVC.1999.820937","DOIUrl":null,"url":null,"abstract":"This paper presents a 1.25-GBaud transceiver chip implemented with 0.35-/spl mu/m CMOS technology, which can be used as an IEEE 802.32 Gigabit Ethernet 1000Base-X physical layer. A voltage mode driver and an on-chip termination circuit reduce signal distortion in the pseudo-ECL serial data stream in the presence of parasitic capacitance and inductance as well as reducing the number of external components. A differential voltage swing of output driver is 1400 mV and power consumption is 510 mW at 3.3 V supply under normal operation.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"19 1","pages":"380-383"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1.25-GBaud CMOS transceiver with on-chip terminator and voltage mode driver for Gigabit Ethernet 1000Base-X\",\"authors\":\"Gijung Ahn, D. Jeong\",\"doi\":\"10.1109/ICVC.1999.820937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 1.25-GBaud transceiver chip implemented with 0.35-/spl mu/m CMOS technology, which can be used as an IEEE 802.32 Gigabit Ethernet 1000Base-X physical layer. A voltage mode driver and an on-chip termination circuit reduce signal distortion in the pseudo-ECL serial data stream in the presence of parasitic capacitance and inductance as well as reducing the number of external components. A differential voltage swing of output driver is 1400 mV and power consumption is 510 mW at 3.3 V supply under normal operation.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"19 1\",\"pages\":\"380-383\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.25-GBaud CMOS transceiver with on-chip terminator and voltage mode driver for Gigabit Ethernet 1000Base-X
This paper presents a 1.25-GBaud transceiver chip implemented with 0.35-/spl mu/m CMOS technology, which can be used as an IEEE 802.32 Gigabit Ethernet 1000Base-X physical layer. A voltage mode driver and an on-chip termination circuit reduce signal distortion in the pseudo-ECL serial data stream in the presence of parasitic capacitance and inductance as well as reducing the number of external components. A differential voltage swing of output driver is 1400 mV and power consumption is 510 mW at 3.3 V supply under normal operation.
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