用于芯片键合的低温选择性钴原子层沉积(ALD)表征

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537353

Ming-Jui Li, M. Breeden, V. Wang, Nyi Myat Khine Linn, C. Winter, A. Kummel, M. Bakir

{"title":"用于芯片键合的低温选择性钴原子层沉积(ALD)表征","authors":"Ming-Jui Li, M. Breeden, V. Wang, Nyi Myat Khine Linn, C. Winter, A. Kummel, M. Bakir","doi":"10.1109/IITC51362.2021.9537353","DOIUrl":null,"url":null,"abstract":"A Cu-Cu bonding approach using low temperature (200 °C) selective Co ALD is demonstrated for Cu pads that are separated by 200 nm. The bonding testbed is characterized before and after Co ALD by SEM and EDS to confirm the feasibility of the approach. AFM and XPS are used to measure the selectivity of Co ALD on Cu and SiO2 surfaces.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Characterization of Low-Temperature Selective Cobalt Atomic Layer Deposition (ALD) for Chip Bonding\",\"authors\":\"Ming-Jui Li, M. Breeden, V. Wang, Nyi Myat Khine Linn, C. Winter, A. Kummel, M. Bakir\",\"doi\":\"10.1109/IITC51362.2021.9537353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Cu-Cu bonding approach using low temperature (200 °C) selective Co ALD is demonstrated for Cu pads that are separated by 200 nm. The bonding testbed is characterized before and after Co ALD by SEM and EDS to confirm the feasibility of the approach. AFM and XPS are used to measure the selectivity of Co ALD on Cu and SiO2 surfaces.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用低温(200°C)选择性Co ALD对距离为200nm的铜焊片进行了Cu-Cu键合。通过扫描电镜(SEM)和能谱仪(EDS)对焊接试验台进行了表征，验证了该方法的可行性。利用原子力显微镜(AFM)和XPS测量了Co ALD在Cu和SiO2表面的选择性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Characterization of Low-Temperature Selective Cobalt Atomic Layer Deposition (ALD) for Chip Bonding

A Cu-Cu bonding approach using low temperature (200 °C) selective Co ALD is demonstrated for Cu pads that are separated by 200 nm. The bonding testbed is characterized before and after Co ALD by SEM and EDS to confirm the feasibility of the approach. AFM and XPS are used to measure the selectivity of Co ALD on Cu and SiO2 surfaces.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 IEEE International Interconnect Technology Conference (IITC)

自引率

0.00%

发文量

期刊最新文献

Contact Interface Characterization of Graphene contacted MoS2 FETs Controlled ALE-type recess of molybdenum for future logic and memory applications Comparison of Copper and Cobalt Surface Reactivity for Advanced Interconnects On-die Interconnect Innovations for Future Technology Nodes Advanced CMP Process Control by Using Machine Learning Image Analysis