一种用于高质量640/spl倍/480 CMOS成像系统的新型双斜率模数转换器

O. Kwon, Ki-Nam Park, Do-Young Lee, Kang-Jin Lee, S. Jun, Chan-Ki Kim, W. Yang
{"title":"一种用于高质量640/spl倍/480 CMOS成像系统的新型双斜率模数转换器","authors":"O. Kwon, Ki-Nam Park, Do-Young Lee, Kang-Jin Lee, S. Jun, Chan-Ki Kim, W. Yang","doi":"10.1109/ICVC.1999.820923","DOIUrl":null,"url":null,"abstract":"In this paper, a novel double slope ADC (Analog-to-Digital Converter) for imaging applications is proposed. With this conversion technique, the resolution of images can be increased especially for low illumination environments while maintaining wide dynamic range. The proposed double slope ADC is implemented with a parallel bank of 640 pseudo-l0b ADCs in a 3.3 V single chip digital CMOS image sensor with 640/spl times/480 (VGA) pixel array, 3.04 kB DRAM line buffer, and digital control block using a 0.5 /spl mu/m single poly, triple metal DRAM baseline.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"29 1","pages":"335-338"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A novel double slope analog-to-digital converter for a high-quality 640/spl times/480 CMOS imaging system\",\"authors\":\"O. Kwon, Ki-Nam Park, Do-Young Lee, Kang-Jin Lee, S. Jun, Chan-Ki Kim, W. Yang\",\"doi\":\"10.1109/ICVC.1999.820923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel double slope ADC (Analog-to-Digital Converter) for imaging applications is proposed. With this conversion technique, the resolution of images can be increased especially for low illumination environments while maintaining wide dynamic range. The proposed double slope ADC is implemented with a parallel bank of 640 pseudo-l0b ADCs in a 3.3 V single chip digital CMOS image sensor with 640/spl times/480 (VGA) pixel array, 3.04 kB DRAM line buffer, and digital control block using a 0.5 /spl mu/m single poly, triple metal DRAM baseline.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"29 1\",\"pages\":\"335-338\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

本文提出了一种用于成像应用的新型双斜率ADC(模数转换器)。利用这种转换技术,可以在保持较宽动态范围的同时,提高图像的分辨率,特别是在低照度环境下。所提出的双斜率ADC是在3.3 V单芯片数字CMOS图像传感器中实现的,该传感器具有640/spl倍/480 (VGA)像素阵列,3.04 kB DRAM线缓冲器和使用0.5 /spl mu/m单多金属三金属DRAM基线的数字控制块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A novel double slope analog-to-digital converter for a high-quality 640/spl times/480 CMOS imaging system
In this paper, a novel double slope ADC (Analog-to-Digital Converter) for imaging applications is proposed. With this conversion technique, the resolution of images can be increased especially for low illumination environments while maintaining wide dynamic range. The proposed double slope ADC is implemented with a parallel bank of 640 pseudo-l0b ADCs in a 3.3 V single chip digital CMOS image sensor with 640/spl times/480 (VGA) pixel array, 3.04 kB DRAM line buffer, and digital control block using a 0.5 /spl mu/m single poly, triple metal DRAM baseline.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Plasma induced charging damage on thin gate oxide A 1.25-GBaud CMOS transceiver with on-chip terminator and voltage mode driver for Gigabit Ethernet 1000Base-X A sense amplifier-based CMOS flip-flop with an enhanced output transition time for high-performance microprocessors Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory Double precharge TSPC for high-speed dual-modulus prescaler
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1