{"title":"MRAM的商业化——历史与未来展望","authors":"S. Ikegawa, F. Mancoff, S. Aggarwal","doi":"10.1109/IITC51362.2021.9537434","DOIUrl":null,"url":null,"abstract":"From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatility, high speed, robust endurance, and system power savings capability. Based on a review of past successful commercialization of MRAM, this paper provides a future perspective of MRAM products. To expand the MRAM market competing with existing memories, three directions are discussed: (1) faster access time, (2) longer endurance cycles, and (3) lower bit cost.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Commercialization of MRAM – Historical and Future Perspective\",\"authors\":\"S. Ikegawa, F. Mancoff, S. Aggarwal\",\"doi\":\"10.1109/IITC51362.2021.9537434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatility, high speed, robust endurance, and system power savings capability. Based on a review of past successful commercialization of MRAM, this paper provides a future perspective of MRAM products. To expand the MRAM market competing with existing memories, three directions are discussed: (1) faster access time, (2) longer endurance cycles, and (3) lower bit cost.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"19 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Commercialization of MRAM – Historical and Future Perspective
From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatility, high speed, robust endurance, and system power savings capability. Based on a review of past successful commercialization of MRAM, this paper provides a future perspective of MRAM products. To expand the MRAM market competing with existing memories, three directions are discussed: (1) faster access time, (2) longer endurance cycles, and (3) lower bit cost.
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