3D多芯片集成与系统集成芯片(SoIC™)

C.C. Hu, M.F. Chen, W. Chiou, Doug C. H. Yu
{"title":"3D多芯片集成与系统集成芯片(SoIC™)","authors":"C.C. Hu, M.F. Chen, W. Chiou, Doug C. H. Yu","doi":"10.23919/VLSIT.2019.8776486","DOIUrl":null,"url":null,"abstract":"The electrical characterization of System on Integrated Chips (SoIC™), an innovative 3D heterogeneous integration technology manufactured in front-end of line with known-good-die is reported. Chiplets integration of devices including foundry leading edge 7nm FinFET technology with SoIC™ illustrates its advantages in high bandwidth density and high power efficiency, as compared with 2.5D and conventional 3D-IC with micro-bump/TSV.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"86 1","pages":"T20-T21"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"3D Multi-chip Integration with System on Integrated Chips (SoIC™)\",\"authors\":\"C.C. Hu, M.F. Chen, W. Chiou, Doug C. H. Yu\",\"doi\":\"10.23919/VLSIT.2019.8776486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical characterization of System on Integrated Chips (SoIC™), an innovative 3D heterogeneous integration technology manufactured in front-end of line with known-good-die is reported. Chiplets integration of devices including foundry leading edge 7nm FinFET technology with SoIC™ illustrates its advantages in high bandwidth density and high power efficiency, as compared with 2.5D and conventional 3D-IC with micro-bump/TSV.\",\"PeriodicalId\":6752,\"journal\":{\"name\":\"2019 Symposium on VLSI Technology\",\"volume\":\"86 1\",\"pages\":\"T20-T21\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2019.8776486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23

摘要

本文报道了系统集成芯片(SoIC™)的电气特性,SoIC™是一种创新的3D异构集成技术,采用已知好的模具在生产线前端制造。与具有微凸点/TSV的2.5D和传统3D-IC相比,包括代工领先的7nm FinFET技术和SoIC™在内的器件的小片集成显示了其在高带宽密度和高功率效率方面的优势。
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3D Multi-chip Integration with System on Integrated Chips (SoIC™)
The electrical characterization of System on Integrated Chips (SoIC™), an innovative 3D heterogeneous integration technology manufactured in front-end of line with known-good-die is reported. Chiplets integration of devices including foundry leading edge 7nm FinFET technology with SoIC™ illustrates its advantages in high bandwidth density and high power efficiency, as compared with 2.5D and conventional 3D-IC with micro-bump/TSV.
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