物理去除表面的纳米级缺陷

A. Busnaina, Hong Lin
{"title":"物理去除表面的纳米级缺陷","authors":"A. Busnaina, Hong Lin","doi":"10.1109/ASMC.2002.1001617","DOIUrl":null,"url":null,"abstract":"As semiconductor device feature size shrinks to 100 nm and smaller, the removal of nano-scale defects presents a tremendous challenge to the industry. There is a need to understand the particle removal mechanisms and recognize their advantages and limitations. In this paper, a particle removal model is modified to be able to consider soft particle deformation. The effect of decreasing particle size down to the nano-scale and its effect on the practical use of present techniques in the future is discussed. The way in which the megasonic-cleaning technique works to remove nano-scale particles from flat and structured surfaces is presented.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Physical removal of nano-scale defects from surfaces\",\"authors\":\"A. Busnaina, Hong Lin\",\"doi\":\"10.1109/ASMC.2002.1001617\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As semiconductor device feature size shrinks to 100 nm and smaller, the removal of nano-scale defects presents a tremendous challenge to the industry. There is a need to understand the particle removal mechanisms and recognize their advantages and limitations. In this paper, a particle removal model is modified to be able to consider soft particle deformation. The effect of decreasing particle size down to the nano-scale and its effect on the practical use of present techniques in the future is discussed. The way in which the megasonic-cleaning technique works to remove nano-scale particles from flat and structured surfaces is presented.\",\"PeriodicalId\":64779,\"journal\":{\"name\":\"半导体技术\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"半导体技术\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2002.1001617\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

摘要

随着半导体器件的特征尺寸缩小到100nm甚至更小,纳米级缺陷的消除对半导体行业提出了巨大的挑战。有必要了解颗粒去除机制,并认识到它们的优点和局限性。本文对颗粒去除模型进行了改进,使其能够考虑颗粒的软变形。讨论了将颗粒尺寸减小到纳米级的影响及其对现有技术在未来的实际应用的影响。介绍了超声速清洗技术从平面和结构表面去除纳米级颗粒的方法。
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Physical removal of nano-scale defects from surfaces
As semiconductor device feature size shrinks to 100 nm and smaller, the removal of nano-scale defects presents a tremendous challenge to the industry. There is a need to understand the particle removal mechanisms and recognize their advantages and limitations. In this paper, a particle removal model is modified to be able to consider soft particle deformation. The effect of decreasing particle size down to the nano-scale and its effect on the practical use of present techniques in the future is discussed. The way in which the megasonic-cleaning technique works to remove nano-scale particles from flat and structured surfaces is presented.
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