Al-PMD(优先金属沉积)工艺的最佳阻挡层

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820884

B. Kim, Jong Myeong Lee, Y. Chae, S. Kang, G. Choi, Y. Park, Sang In Lee

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引用次数: 0

摘要

研究了Al- pmd工艺中不同类型TiN对Al- Si触点的阻挡性能和可靠性。当ACVD-TiN用作阻挡层时，Al-PMD工艺被证明是一种出色的高密度器件金属化技术，如千兆比特dram及以上。ACVD-TiN密度高，共形性好，具有较好的扩散阻挡性能。

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Optimum barrier layer for Al-PMD (preferential metal deposition) process

The barrier properties and the reliability of Al to Si contacts using different types of TiN in the Al-PMD process are investigated. The Al-PMD process is shown to be an excellent metallization technique for high density devices such as Giga-bit DRAMs and beyond when ACVD-TiN is used as a barrier layer. ACVD-TiN has the best diffusion barrier properties due to its high density and good conformality.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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