基于si的毫米波系统的超宽带芯片对芯片互连到220 GHz

D. Kopp, M. A. Khan, G. Bernstein, P. Fay
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引用次数: 3

摘要

演示了高频下的超宽带芯片对芯片互连。这些互连基于被子封装(QP)方法,由于其极宽的带宽和易于组装,似乎有希望在毫米波电路中应用。利用矢量网络分析仪测量了在220 GHz高电阻率硅衬底上50 Ω共面波导环境下片对片互连的性能,并与三维电磁建模得到的投影结果进行了比较。单模无谐振工作在220 GHz范围内,整个频率范围内的插入损耗低于1.5 dB。虽然导电环氧树脂(用于本文报道的原型)的电阻限制了QP结核的性能,但模拟表明,更好的连接方法(如焊接)有望在220 GHz时产生远低于1 dB的插入损耗。
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Ultra-broadband chip-to-chip interconnects to 220 GHz for Si-based millimeter-wave systems
Ultra-broadband chip-to-chip interconnects at high frequencies are demonstrated. These interconnects, based on the Quilt Packaging (QP) approach, appear to be promising for applications in millimeter-wave circuits due to their extremely wide bandwidth and ease of assembly. The performance of chip-to-chip interconnects in a 50 Ω coplanar waveguide environment on high-resistivity silicon substrates has been measured to 220 GHz using a vector network analyzer, and is compared with projections obtained from 3D electromagnetic modeling. Single-mode, resonance-free operation is demonstrated through 220 GHz, with insertion loss below 1.5 dB over the full frequency range. Although the resistance of the conductive epoxy (used for the prototypes reported here) limits the performance of the QP nodules, simulations indicate that better joining methods such as soldering promise to yield insertion loss of much less than 1 dB at 220 GHz.
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