深亚微米MOSFET的可扩展阈值电压模型

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820990

J. Kahng, J.H. Kim, M. Jo, H. Yoon

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引用次数: 1

摘要

考虑到MOSFET在垂直方向和横向方向上掺杂分布不均匀的影响，并求解表面电位的准二维微分方程，提出了一种新的阈值电压模型。我们的模型很好地预测了初始阈值电压随着通道长度的减少而上升，并且由于反向短通道效应和短通道效应而降低。

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Scalable threshold voltage model for deep-submicrometer MOSFET

Considering effects of nonuniform doping profile in vertical and lateral directions of MOSFET and solving a quasi two-dimensional differential equation for the surface potential, we have proposed a new threshold voltage model. Our model predicts well an initial roll-up of the threshold voltage with decreasing channel lengths and reduction of it due to the reverse short-channel effects and the short-channel effects.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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