具有无损读出操作的单晶体管铁电RAM

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820955

Shiho Kim, Il-Suk Yang, Won-Jae Lee, I. You, B. Yu, K. Cho

{"title":"具有无损读出操作的单晶体管铁电RAM","authors":"Shiho Kim, Il-Suk Yang, Won-Jae Lee, I. You, B. Yu, K. Cho","doi":"10.1109/ICVC.1999.820955","DOIUrl":null,"url":null,"abstract":"A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"218 1","pages":"433-436"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A single transistor ferroelectric RAM with nondestructive readout operations\",\"authors\":\"Shiho Kim, Il-Suk Yang, Won-Jae Lee, I. You, B. Yu, K. Cho\",\"doi\":\"10.1109/ICVC.1999.820955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"218 1\",\"pages\":\"433-436\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种非易失性单晶体管型FRAM。为了克服单晶体管型FRAM的选择问题，每个井与相邻的柱隔离，因此可以单独控制井的偏置，并且可以处于浮动状态。HSPICE模拟结果表明，所提出的单元阵列运行成功。未选电池的最差栅极干扰电压小于2 V，满足V/3规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A single transistor ferroelectric RAM with nondestructive readout operations

A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

自引率

0.00%

发文量