集成电路技术的晶圆级封装和3D互连

R. Islam, C. Brubaker, P. Lindner, C. Schaefer
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引用次数: 9

摘要

封装技术的重要因素是IC封装成本、封装对电路和系统性能的影响以及封装的可靠性。晶圆级封装技术是未来几代集成电路的一个有前途的解决方案。本文综述了晶圆级碰撞工艺及其对厚抗蚀剂涂层和全场对准曝光的要求。3D互连技术是提高电子器件功能密度和降低总封装成本的可行解决方案。关键问题是能够精确地对齐和粘合,一微米或更小,两个硅晶圆或硅晶圆到另一个衬底。对于CMOS器件,该技术可以应用于芯片级封装,也可以应用于先进的3D互连工艺。在本文中,我们描述了一种使用键合界面上的对准目标进行晶圆对晶圆对准的新方法,即面对面的晶圆对准(SmartVieW/sup TM/),它依赖于精密对准定位系统以一微米或更高的精度来对准和对准晶圆。
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Wafer level packaging and 3D interconnect for IC technology
The important factors for packaging technology are IC packaging costs, the impact of the package on circuit and system performance, and the reliability of the package. Wafer level packaging technology is a promising solution for future IC generations. This paper reviews the wafer level bumping process and its requirement for thick resist coating and full field aligned exposure. 3D interconnect technology is a viable solution for increasing electronic device functional density and reducing total packaging costs. The critical issue is the ability to align and bond with precision, one micron or less, two silicon wafers or a silicon wafer to another substrate. For CMOS devices, this technology can be applied to chip-scale packaging and also to advanced 3D interconnect processes. In this paper, we describe a new approach to wafer-to-wafer alignment using alignment targets at the bond interface, i.e. face to face wafer alignment (SmartVieW/sup TM/) that relies on precision alignment positioning systems to register and align wafers with one micron or better precision.
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