两相升压发电机[CMOS dram]

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.821007

Y.H. Kim, J. Nam, Y. Sohn, S. Heo, S. Lee, H.J. Park, Y. han, J. Doh, Y.J. Choi, J. Choi, J. Choi, C. Park

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引用次数: 1

摘要

提出了一种用于千兆位dram的两相升压(VPP)发生器电路。将通型晶体管的最大栅氧化电压和电源电压下限分别降低到VPP和V/sub TN/，而传统电荷泵电路的电压下限分别为VPP+VDD和1.5 V/sub TN/。在新电路中，泵送电流也有所增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Two-phase boosted voltage generator [CMOS DRAMs]

A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V/sub TN/ respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V/sub TN/ respectively. Also the pumping current was increased in the new circuit.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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