超薄栅极介质薄膜的在线电学特性

半导体技术 Pub Date : 2002-08-07 DOI:10.1109/ASMC.2002.1001563

F. Cubaynes, S. Passefort, K. Eason, Xiafang Zhang, L. Date, D. Pique, T. Conard, A. Rothschild, M. Schaekers

{"title":"超薄栅极介质薄膜的在线电学特性","authors":"F. Cubaynes, S. Passefort, K. Eason, Xiafang Zhang, L. Date, D. Pique, T. Conard, A. Rothschild, M. Schaekers","doi":"10.1109/ASMC.2002.1001563","DOIUrl":null,"url":null,"abstract":"In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and \"classic\" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"In-line electrical characterization of ultrathin gate dielectric films\",\"authors\":\"F. Cubaynes, S. Passefort, K. Eason, Xiafang Zhang, L. Date, D. Pique, T. Conard, A. Rothschild, M. Schaekers\",\"doi\":\"10.1109/ASMC.2002.1001563\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and \\\"classic\\\" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.\",\"PeriodicalId\":64779,\"journal\":{\"name\":\"半导体技术\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"半导体技术\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2002.1001563\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文报道了超薄栅极电介质的在线测量。利用在线光学和非接触式电测量技术研究了各种等离子体氮化氧化物的EOT, EOT小于1.5 nm。与物理分析和“经典”电容电压测量的良好相关性表明，在线测量技术适合首次对超薄介质薄膜进行定性评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

In-line electrical characterization of ultrathin gate dielectric films

In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

半导体技术

自引率

0.00%

发文量

8436

期刊最新文献

A manufacturable shallow trench isolation process for sub-0.2 um DRAM technologies Ultra-dilute silicon wafer clean chemistry for fabrication of RF microwave devices Planarization yield limiters for wafer-scale 3D ICs Statistical modeling and analysis of wafer test fail counts An approach for improving yield with intentional defects