用于深亚微米CMOS的剥离- wn /sub - x//多晶硅栅极技术

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820886

B. Lee, N. Park, S. Han, Kyungho Lee

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引用次数: 0

摘要

我们发现无定形WN/sub x//poly-Si的RTA导致氮原子的剥蚀，同时形成低电阻率W和高度可靠的原位势垒层。此外，经过选择性氧化和后退火处理后，裸露的WN/sub x//多晶硅栅极的电学特性优于W/WN/sub x//多晶硅栅极。

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Denuded-WN/sub x//poly-Si gate technology for deep sub-micron CMOS

We found that RTA of amorphous WN/sub x//poly-Si resulted in denudation of nitrogen atoms with the formation of low resistivity W and a highly reliable in situ barrier layer simultaneously. Furthermore, electrical characteristics of the denuded-WN/sub x//poly-Si gate were superior to those of W/WN/sub x//poly-Si gate after selective oxidation and post anneal processes.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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