Dae-Myeong Geum, Sanghyeon Kim, S. Kim, S. Kang, J. Kyhm, J. Song, W. Choi, E. Yoon
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Monolithic lntegratIon of GaAs//InGaAs photodetectors for multicolor detection
Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR.
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