毯子倾斜植入浅沟隔离(BTI-STI)工艺增强DRAM保留时间特性

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820844

Jeone-Hwan Son, Kunsik Park, J. Nam, Shin-Young Chung, Hyeong-Mo Yang, S. Park, Youngjong Lee, Kyungho Lee

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引用次数: 0

摘要

提出并研究了毯子倾斜植入浅沟隔离(BTI-STI)工艺提高高密度DRAM的滞留时间特性。证实了BTI-STI工艺由于低表面沟道掺杂，可以提高尾部保持时间，并且即使在窄宽度下，埋沟道p-MOSFET也没有退化现象。该工艺有助于在不增加工艺复杂性的情况下实现未来的高密度DRAM。

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Blanket tilt implanted shallow trench isolation (BTI-STI) process for enhanced DRAM retention time characteristics

Blanket tilt implanted shallow trench isolation (BTI-STI) process is proposed and investigated for enhanced retention time characteristics of high density DRAM. It is confirmed that BTI-STI process can improve the tail retention time due to low surface channel doping and no degradation is observed for buried-channel p-MOSFET even at narrow width. The proposed process is useful for realizing future high density DRAM without increase in process complexity.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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