面向21世纪的技术前沿:嵌入式DRAM和系统lsi -制程、电路和设计技术

E. Takeda, T. Wantanabe, S. Kimura, K. Suzuki, K. Sasaki
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引用次数: 0

摘要

硅技术的发展正在开启“硅上系统”的新时代。也就是说,大型内存将与CPU和其他逻辑宏集成在一起。这类芯片,即所谓的系统lsi,由于具有高数据传输速率、低I/O功耗和系统小型化的特点,具有很好的前景,特别是在用于高级多媒体应用的移动系统中。然而,这种面向系统的LSI带来了新的技术问题,如亚阈值泄漏电流、工艺成本和设计复杂性的增加。这也将对LSI制造企业的经营战略产生重大影响。本文综述了嵌入式dram和系统lsi的特点和存在的问题,并介绍了它们的设计和制造的先进技术。
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Technology frontiers towards the 21st century: embedded DRAM and the system LSIs-process, circuits, and design technology
The development of silicon technology is opening the new era of "systems on silicon". That is, a large-scale memory will be integrated with a CPU and other logic macros. These kinds of chips, so-called system LSIs, have a promising future, especially in mobile systems for advanced multimedia applications since they feature high data-transfer rate, low I/O power dissipation, and system miniaturization. However, such a system-oriented LSI causes new technical problems such as increases in subthreshold leakage current, process cost, and design complexity. It will also have a significant influence on the business strategies of LSI makers. This paper reviews the features and issues of embedded DRAMs and system LSIs and then introduces advanced technologies for designing and fabricating them.
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