{"title":"l1波段C/ a码GPS射频前端芯片的设计与实现","authors":"Jong-Moon Kim, Ho-Jun Song, Young-Back Kim","doi":"10.1109/ICVC.1999.820934","DOIUrl":null,"url":null,"abstract":"This paper describes the design and implementation of an L1-band C/A-code GPS RF front-end chip. The chip incorporates a low-noise RF preamplifier, a frequency synthesizer with a conventional voltage-controlled oscillator, a variable gain amplifier, and an analog-to-digital converter. The only external requirements are a temperature compensated crystal oscillator, a two-pole LC filter, a varactor-tuned LC tank circuit for tuning the frequency of the VCO, and standard passive components for the PLL loop filter, the impedance matching and the power supply decoupling. The chip has been implemented in a 0.8-/spl mu/m BiCMOS process. The chip size and operating current are 9 mm/sup 2/ and 42 mA at 3.3 V, respectively.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"67 1","pages":"372-375"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Design and implementation of L1-band C/A-code GPS RF front-end chip\",\"authors\":\"Jong-Moon Kim, Ho-Jun Song, Young-Back Kim\",\"doi\":\"10.1109/ICVC.1999.820934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and implementation of an L1-band C/A-code GPS RF front-end chip. The chip incorporates a low-noise RF preamplifier, a frequency synthesizer with a conventional voltage-controlled oscillator, a variable gain amplifier, and an analog-to-digital converter. The only external requirements are a temperature compensated crystal oscillator, a two-pole LC filter, a varactor-tuned LC tank circuit for tuning the frequency of the VCO, and standard passive components for the PLL loop filter, the impedance matching and the power supply decoupling. The chip has been implemented in a 0.8-/spl mu/m BiCMOS process. The chip size and operating current are 9 mm/sup 2/ and 42 mA at 3.3 V, respectively.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"67 1\",\"pages\":\"372-375\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and implementation of L1-band C/A-code GPS RF front-end chip
This paper describes the design and implementation of an L1-band C/A-code GPS RF front-end chip. The chip incorporates a low-noise RF preamplifier, a frequency synthesizer with a conventional voltage-controlled oscillator, a variable gain amplifier, and an analog-to-digital converter. The only external requirements are a temperature compensated crystal oscillator, a two-pole LC filter, a varactor-tuned LC tank circuit for tuning the frequency of the VCO, and standard passive components for the PLL loop filter, the impedance matching and the power supply decoupling. The chip has been implemented in a 0.8-/spl mu/m BiCMOS process. The chip size and operating current are 9 mm/sup 2/ and 42 mA at 3.3 V, respectively.