{"title":"选择性CVD和MoCl5插层制备高掺杂MLG图","authors":"E. Ketsombun, T. Akimoto, K. Ueno","doi":"10.1109/IITC51362.2021.9537349","DOIUrl":null,"url":null,"abstract":"Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5 Intercalation\",\"authors\":\"E. Ketsombun, T. Akimoto, K. Ueno\",\"doi\":\"10.1109/IITC51362.2021.9537349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5 Intercalation
Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.
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