基于Nb1-xO2的通用选择器，具有超高耐久性(>1012)，高速(10ns)和优异的Vth稳定性

2019 Symposium on VLSI Technology Pub Date : 2019-06-01 DOI:10.23919/VLSIT.2019.8776546

Q. Luo, Jie Yu, Xumeng Zhang, K. Xue, J. Yuan, Yan Cheng, Tiancheng Gong, H. Lv, Xiaoxin Xu, Peng Yuan, Jiahao Yin, L. Tai, S. Long, Qi Liu, X. Miao, Jing Li, Ming Liu

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引用次数: 18

摘要

在这项工作中，我们展示了一种高性能的基于Nb1-xO2的选择器，该选择器具有热反馈机制，可用于3D x点应用。实现了超高续航时间$(> 10^{12})$、高运行速度(10ns)、双向运行和优异的Vth稳定性。通过在Nb1-xO2薄膜和电极之间添加阻挡层，使失态泄漏电流降低了一个数量级(选择性高达500)。这项工作为各种新兴存储器提供了一个通用的选择解决方案，包括RRAM, MRAM和PCM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability

In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance $(> 10^{12})$, high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.

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2019 Symposium on VLSI Technology

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