利用表征试验车进行失效率和限产钨塞腐蚀诊断

X. Tao, K. Reis, B. Haby, M. Karnett, N. White, C. Watts, M. Delgado, K. Gardner, K. R. Harris
{"title":"利用表征试验车进行失效率和限产钨塞腐蚀诊断","authors":"X. Tao, K. Reis, B. Haby, M. Karnett, N. White, C. Watts, M. Delgado, K. Gardner, K. R. Harris","doi":"10.1109/ASMC.2002.1001591","DOIUrl":null,"url":null,"abstract":"Electrical microprobe and Passive Voltage Contrast (PVC) techniques were used to investigate incompletely filled contacts and vias on our 0.20 um FEOL (Front-End-Of-Line) characterization and process qualification vehicles. The failure mechanism of unfilled tungsten plugs was attributed to electrochemical corrosion during the post-metal etch solvent strip. This tungsten plug corrosion led to high contact and via failure rates, failure of the yield impact prediction model, electromigration test failure, and 3% to 6% yield loss at final test. Several detailed experiments were performed towards identifying and resolving this corrosion plug failure mechanism. It was found that modification of the Tungsten CMP buff significantly reduced the failure rate and led to increased probe yield with improved manufacturability.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Failure rate and yield-limiting tungsten plug corrosion diagnosis using characterization test vehicles\",\"authors\":\"X. Tao, K. Reis, B. Haby, M. Karnett, N. White, C. Watts, M. Delgado, K. Gardner, K. R. Harris\",\"doi\":\"10.1109/ASMC.2002.1001591\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical microprobe and Passive Voltage Contrast (PVC) techniques were used to investigate incompletely filled contacts and vias on our 0.20 um FEOL (Front-End-Of-Line) characterization and process qualification vehicles. The failure mechanism of unfilled tungsten plugs was attributed to electrochemical corrosion during the post-metal etch solvent strip. This tungsten plug corrosion led to high contact and via failure rates, failure of the yield impact prediction model, electromigration test failure, and 3% to 6% yield loss at final test. Several detailed experiments were performed towards identifying and resolving this corrosion plug failure mechanism. It was found that modification of the Tungsten CMP buff significantly reduced the failure rate and led to increased probe yield with improved manufacturability.\",\"PeriodicalId\":64779,\"journal\":{\"name\":\"半导体技术\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"半导体技术\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2002.1001591\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

电微探头和无源电压对比(PVC)技术用于研究我们的0.20 um FEOL(前端线)表征和工艺鉴定车辆上未完全填充的触点和过孔。未填充钨塞的失效机理是金属后蚀刻溶剂带过程中的电化学腐蚀。这种钨塞腐蚀导致高接触和通孔失败率、屈服影响预测模型失效、电迁移测试失败,以及最终测试中3%至6%的屈服损失。为了确定和解决腐蚀塞的失效机制,进行了一些详细的实验。结果表明,对钨基CMP buff进行改性可以显著降低探针的故障率,提高探针的成品率,提高探针的可制造性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Failure rate and yield-limiting tungsten plug corrosion diagnosis using characterization test vehicles
Electrical microprobe and Passive Voltage Contrast (PVC) techniques were used to investigate incompletely filled contacts and vias on our 0.20 um FEOL (Front-End-Of-Line) characterization and process qualification vehicles. The failure mechanism of unfilled tungsten plugs was attributed to electrochemical corrosion during the post-metal etch solvent strip. This tungsten plug corrosion led to high contact and via failure rates, failure of the yield impact prediction model, electromigration test failure, and 3% to 6% yield loss at final test. Several detailed experiments were performed towards identifying and resolving this corrosion plug failure mechanism. It was found that modification of the Tungsten CMP buff significantly reduced the failure rate and led to increased probe yield with improved manufacturability.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
8436
期刊最新文献
A manufacturable shallow trench isolation process for sub-0.2 um DRAM technologies Ultra-dilute silicon wafer clean chemistry for fabrication of RF microwave devices Planarization yield limiters for wafer-scale 3D ICs Statistical modeling and analysis of wafer test fail counts An approach for improving yield with intentional defects
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1