纳米铜互连中全排列通孔中AlOx的选择性沉积

Son Van Nguyen, H. Shobha, C. Peethala, T. Haigh, H. Huang, J. Li, J. Demarest, B. Haran, D. Hausmann, P. Lemaire, K. Sharma, P. Ramani, A. Mahorowala
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引用次数: 1

摘要

将AlOx选择性地沉积在SiCOH上,形成32 nm间距的Cu-SiCOH图案,形成完全对准通孔(FAV)测试结构。评价了选择性沉积工艺性能及其与5nm BEOL FAV结构的集成。选择性沉积AlOx的过程包括表面处理、选择性自对准分子(SAM)键合抑制Cu金属表面,以及采用化学气相沉积工艺在低于300℃的各种前驱体和工艺条件下在SiCOH介电介质上选择性生长AlOx。厚度为4 ~ 6nm的薄选择性alx对SiCOH的选择性优于不同间距的Co包覆Cu-SiCOH结构。通过AlOx选择性沉积在32 nm间距结构上测量了Via链的电产率,与采用Cu湿凹槽法建立的FAV工艺相当。这表明选择性AlOx沉积工艺在SiCOH介质表面具有很高的选择性,不会在Co - Capped Cu表面形成缺陷。
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Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process performance and its integration into the 5nm BEOL FAV structure were evaluated. The selective AlOx deposition involves multistep process including surface treatment, selective Self-Aligned Molecules (SAM) bonding to inhibit Cu metal surface, and the selective growth of AlOx on top of SiCOH dielectric using Chemical vapor deposition process with various precursors and process conditions below 300°C. Thin selective AlOx of 4–6 nm thickness show excellent selectivity on SiCOH over Co capped Cu-SiCOH patterned structures with various spacing. The Via Chain electrical yields were measured on 32 nm pitch structures by AlOx selective deposition and are comparable to the established FAV process by Cu wet recess. This indicates that the Selective AlOx deposition process is highly selective on SiCOH dielectric surface without defect formation in the Co Capped Cu surfaces.
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