在金属蚀刻过程中采用两步降功率法显著降低等离子体引起的损伤

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820974

Jongwan Jung, Byung-Sung Song, Ki-Wuk Nam, Sang-Wuk Ha, Dae-Byung Kim

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引用次数: 0

摘要

首次证明了在MERIE和ICP系统中，射频功率关断时的充电损伤与稳态充电一样严重。新提出的两步断电方法显著降低了射频电源关断时的充电损伤。该方法具有较高的重现性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dramatic reduction of plasma induced damage using 2-step power down method in metal etch process

For the first time it is shown that charging damage during RF power turn-off is as severe as steady state charging in both MERIE and ICP system. A newly proposed 2-step power down method dramatically reduced the charging damage during rf power turn-off. Moreover this method has shown highly reproducible results.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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