{"title":"CuAl2成分偏差对BTS和TDDB可靠性的影响","authors":"T. Kuge, M. Yahagi, J. Koike","doi":"10.1109/IITC51362.2021.9537528","DOIUrl":null,"url":null,"abstract":"In this paper, we report the property and reliability of CuAl2 and its effects of compositional shift within ±5%. Resistivity was found to be 7–8 μΩ· cm after annealing at 400 °C, even with compositional shift. Capacitance–Voltage (C–V) after Bias Thermal Stress (BTS) test showed no shift of flat–band voltage under the condition of 3.0 MV/cm × 30 min at 250 °C. Time–Dependent–Dielectric–Breakdown (TDDB) evaluation showed that the reliability is better than that of conventional Cu/TaN interconnects.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"24 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effects of composition deviation of CuAl2 on BTS and TDDB reliability\",\"authors\":\"T. Kuge, M. Yahagi, J. Koike\",\"doi\":\"10.1109/IITC51362.2021.9537528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the property and reliability of CuAl2 and its effects of compositional shift within ±5%. Resistivity was found to be 7–8 μΩ· cm after annealing at 400 °C, even with compositional shift. Capacitance–Voltage (C–V) after Bias Thermal Stress (BTS) test showed no shift of flat–band voltage under the condition of 3.0 MV/cm × 30 min at 250 °C. Time–Dependent–Dielectric–Breakdown (TDDB) evaluation showed that the reliability is better than that of conventional Cu/TaN interconnects.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"24 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of composition deviation of CuAl2 on BTS and TDDB reliability
In this paper, we report the property and reliability of CuAl2 and its effects of compositional shift within ±5%. Resistivity was found to be 7–8 μΩ· cm after annealing at 400 °C, even with compositional shift. Capacitance–Voltage (C–V) after Bias Thermal Stress (BTS) test showed no shift of flat–band voltage under the condition of 3.0 MV/cm × 30 min at 250 °C. Time–Dependent–Dielectric–Breakdown (TDDB) evaluation showed that the reliability is better than that of conventional Cu/TaN interconnects.
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