ald - pvd TaN过渡层的通孔电阻分析

Y. Yoon, Chang-Jo Kim, Junki Jang, K. Sung, H. Kim, Yunki Choi, Jeonghoon Ahn, Won-Chull Han, W. Jang, Rakhwan Kim, Don-Jin Shin, Juheon Kim, Y. Lim, H. Yim, W. Kang, Jongmil Youn
{"title":"ald - pvd TaN过渡层的通孔电阻分析","authors":"Y. Yoon, Chang-Jo Kim, Junki Jang, K. Sung, H. Kim, Yunki Choi, Jeonghoon Ahn, Won-Chull Han, W. Jang, Rakhwan Kim, Don-Jin Shin, Juheon Kim, Y. Lim, H. Yim, W. Kang, Jongmil Youn","doi":"10.1109/IITC51362.2021.9537395","DOIUrl":null,"url":null,"abstract":"We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The via resistance analysis at ALD-to-PVD TaN transition layer\",\"authors\":\"Y. Yoon, Chang-Jo Kim, Junki Jang, K. Sung, H. Kim, Yunki Choi, Jeonghoon Ahn, Won-Chull Han, W. Jang, Rakhwan Kim, Don-Jin Shin, Juheon Kim, Y. Lim, H. Yim, W. Kang, Jongmil Youn\",\"doi\":\"10.1109/IITC51362.2021.9537395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们证明了当薄的ALD(原子层沉积)TaN作为阻挡金属沉积到Cu互连时,上通孔电阻显着增加。我们还发现,异常的上通孔电阻与氮扩散引起的N/Ta增加一致。为了克服这个问题,我们研究了一种混合TaN (ALD TaN顶部的PVD TaN),它可以防止氮扩散到上通孔底部,从而提高上通孔阻力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
The via resistance analysis at ALD-to-PVD TaN transition layer
We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Contact Interface Characterization of Graphene contacted MoS2 FETs Controlled ALE-type recess of molybdenum for future logic and memory applications Comparison of Copper and Cobalt Surface Reactivity for Advanced Interconnects On-die Interconnect Innovations for Future Technology Nodes Advanced CMP Process Control by Using Machine Learning Image Analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1