Young Soo Kim, N. Park, J. K. Kim, S. Han, Kyungho Lee
{"title":"用于ULSI器件的热稳定w位线技术","authors":"Young Soo Kim, N. Park, J. K. Kim, S. Han, Kyungho Lee","doi":"10.1109/ICVC.1999.820975","DOIUrl":null,"url":null,"abstract":"We have investigated the various types of diffusion barriers for the thermally stable W-bit line structure. We estimated the thermal stability and the electrical characteristics of various barrier structures after annealing at 850/spl deg/C and then optimized the W-bit line process. A newly developed PVD-Ti/PVD-TiN/RTP/Strip/PVD-TiN/CVD-W structure showed good integrity with the W-bit line after high temperature processing. It is concluded that the prevention of oxygen penetration during silicidation is most important for the formation of a uniform silicide layer and better contact characteristics.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"7 1","pages":"480-483"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally stable W-bit line technology for ULSI device application\",\"authors\":\"Young Soo Kim, N. Park, J. K. Kim, S. Han, Kyungho Lee\",\"doi\":\"10.1109/ICVC.1999.820975\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the various types of diffusion barriers for the thermally stable W-bit line structure. We estimated the thermal stability and the electrical characteristics of various barrier structures after annealing at 850/spl deg/C and then optimized the W-bit line process. A newly developed PVD-Ti/PVD-TiN/RTP/Strip/PVD-TiN/CVD-W structure showed good integrity with the W-bit line after high temperature processing. It is concluded that the prevention of oxygen penetration during silicidation is most important for the formation of a uniform silicide layer and better contact characteristics.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"7 1\",\"pages\":\"480-483\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820975\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermally stable W-bit line technology for ULSI device application
We have investigated the various types of diffusion barriers for the thermally stable W-bit line structure. We estimated the thermal stability and the electrical characteristics of various barrier structures after annealing at 850/spl deg/C and then optimized the W-bit line process. A newly developed PVD-Ti/PVD-TiN/RTP/Strip/PVD-TiN/CVD-W structure showed good integrity with the W-bit line after high temperature processing. It is concluded that the prevention of oxygen penetration during silicidation is most important for the formation of a uniform silicide layer and better contact characteristics.
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