目标缺陷减少和检验优化的方法

A. Skumanich, E. Ryabova
{"title":"目标缺陷减少和检验优化的方法","authors":"A. Skumanich, E. Ryabova","doi":"10.1109/ASMC.2002.1001577","DOIUrl":null,"url":null,"abstract":"A methodology is outlined to establish the prioritization of defects under conditions of low sampling statistics based on the deliberate introduction of defects at specific process points. Probe results from electrical test structures are correlated with optical defect inspection data to determine the kill rates of various defects. The methodology generalizes from a standard approach that typically relies on a high statistical sampling plan with significant wafer area coverage. In this case, the probed area coverage is reduced to 1-3% of the wafer surface but still provides defect impact prioritization for targeted defect reduction and optimized inspection strategies for optical capture and SEM review.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Methodology for targeted defect reduction and inspection optimization\",\"authors\":\"A. Skumanich, E. Ryabova\",\"doi\":\"10.1109/ASMC.2002.1001577\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A methodology is outlined to establish the prioritization of defects under conditions of low sampling statistics based on the deliberate introduction of defects at specific process points. Probe results from electrical test structures are correlated with optical defect inspection data to determine the kill rates of various defects. The methodology generalizes from a standard approach that typically relies on a high statistical sampling plan with significant wafer area coverage. In this case, the probed area coverage is reduced to 1-3% of the wafer surface but still provides defect impact prioritization for targeted defect reduction and optimized inspection strategies for optical capture and SEM review.\",\"PeriodicalId\":64779,\"journal\":{\"name\":\"半导体技术\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"半导体技术\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2002.1001577\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文概述了一种基于在特定过程点上故意引入缺陷的低采样统计条件下建立缺陷优先级的方法。电学测试结构的探头结果与光学缺陷检测数据相关联,以确定各种缺陷的杀伤率。该方法从标准方法中概括出来,该方法通常依赖于具有显著晶圆面积覆盖的高统计抽样计划。在这种情况下,探测面积的覆盖范围减少到晶圆表面的1-3%,但仍然为有针对性的缺陷减少和优化的光学捕获和扫描电镜检查策略提供缺陷影响的优先级。
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Methodology for targeted defect reduction and inspection optimization
A methodology is outlined to establish the prioritization of defects under conditions of low sampling statistics based on the deliberate introduction of defects at specific process points. Probe results from electrical test structures are correlated with optical defect inspection data to determine the kill rates of various defects. The methodology generalizes from a standard approach that typically relies on a high statistical sampling plan with significant wafer area coverage. In this case, the probed area coverage is reduced to 1-3% of the wafer surface but still provides defect impact prioritization for targeted defect reduction and optimized inspection strategies for optical capture and SEM review.
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