D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah
{"title":"用于Cu低k互连的先进金属和介质阻挡帽膜","authors":"D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah","doi":"10.1109/IITC.2014.6831866","DOIUrl":null,"url":null,"abstract":"Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Advanced metal and dielectric barrier cap films for Cu low k interconnects\",\"authors\":\"D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah\",\"doi\":\"10.1109/IITC.2014.6831866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2014.6831866\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced metal and dielectric barrier cap films for Cu low k interconnects
Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.