S. Gatineau, Changhee Ko, J. Gatineau, Clément Lansalot-Matras, Chang-Fang Hsiao
{"title":"新型镍前驱体的合成及PEALD评价","authors":"S. Gatineau, Changhee Ko, J. Gatineau, Clément Lansalot-Matras, Chang-Fang Hsiao","doi":"10.1109/IITC.2014.6831859","DOIUrl":null,"url":null,"abstract":"A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H<sub>2</sub>/NH<sub>3</sub> as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"24 1","pages":"125-126"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Synthesis and PEALD evaluation of new Nickel precursors\",\"authors\":\"S. Gatineau, Changhee Ko, J. Gatineau, Clément Lansalot-Matras, Chang-Fang Hsiao\",\"doi\":\"10.1109/IITC.2014.6831859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H<sub>2</sub>/NH<sub>3</sub> as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"24 1\",\"pages\":\"125-126\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2014.6831859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis and PEALD evaluation of new Nickel precursors
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
