{"title":"窄通道自对准量子点硅MOS存储器","authors":"Sangyeon Han, T. Hwang, Hyungcheol Shin","doi":"10.1109/ICVC.1999.820869","DOIUrl":null,"url":null,"abstract":"The essential technology for fabricating the quantum dot flash memory is nanolithography. With E-beam patterning technology and Cl/sub 2/ based RIE (Reactive Ion Etching), a self-aligned 100 nm wide quantum dot and 100 nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift was about 1.0 V and the corresponding number of electrons involved in this operation was estimated to be about 70. The memory also showed excellent retention characteristics.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"6 1","pages":"187-189"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon MOS memory with self-aligned quantum dot on narrow channel\",\"authors\":\"Sangyeon Han, T. Hwang, Hyungcheol Shin\",\"doi\":\"10.1109/ICVC.1999.820869\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The essential technology for fabricating the quantum dot flash memory is nanolithography. With E-beam patterning technology and Cl/sub 2/ based RIE (Reactive Ion Etching), a self-aligned 100 nm wide quantum dot and 100 nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift was about 1.0 V and the corresponding number of electrons involved in this operation was estimated to be about 70. The memory also showed excellent retention characteristics.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"6 1\",\"pages\":\"187-189\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820869\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon MOS memory with self-aligned quantum dot on narrow channel
The essential technology for fabricating the quantum dot flash memory is nanolithography. With E-beam patterning technology and Cl/sub 2/ based RIE (Reactive Ion Etching), a self-aligned 100 nm wide quantum dot and 100 nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift was about 1.0 V and the corresponding number of electrons involved in this operation was estimated to be about 70. The memory also showed excellent retention characteristics.
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