CMP中柔性抛光面(FPS)与刚性抛光面(RPS)的优缺点

Y. Gotkis, D. Wei, R. Kistler
{"title":"CMP中柔性抛光面(FPS)与刚性抛光面(RPS)的优缺点","authors":"Y. Gotkis, D. Wei, R. Kistler","doi":"10.1109/ASMC.2002.1001568","DOIUrl":null,"url":null,"abstract":"Two major conceptual CMP approaches, namely flexible polishing surface (utilized in linear belt CMP) and rigid polishing surface (hard platen rotary and orbital CMP) concepts are compared with regard to process stability, uniformity, planarization efficiency and other performance features. A new CMP characteristic, Normalized Removal Work, the amount of wafer layer material removed by a unit of active pad area (NRW=(Thickness removed)/(Active pad area), [A/sq. inch]), is used to analyze and compare the concepts. The NRW shows how much of the removed material is transferred and redeposited over a unit of pad area. It influences all aspects of the CMP process. Low NRW is good for CMP, high NRW is bad for CMP.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible polishing surface (FPS) vs rigid polishing surface (RPS) in CMP: pros and cons\",\"authors\":\"Y. Gotkis, D. Wei, R. Kistler\",\"doi\":\"10.1109/ASMC.2002.1001568\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two major conceptual CMP approaches, namely flexible polishing surface (utilized in linear belt CMP) and rigid polishing surface (hard platen rotary and orbital CMP) concepts are compared with regard to process stability, uniformity, planarization efficiency and other performance features. A new CMP characteristic, Normalized Removal Work, the amount of wafer layer material removed by a unit of active pad area (NRW=(Thickness removed)/(Active pad area), [A/sq. inch]), is used to analyze and compare the concepts. The NRW shows how much of the removed material is transferred and redeposited over a unit of pad area. It influences all aspects of the CMP process. Low NRW is good for CMP, high NRW is bad for CMP.\",\"PeriodicalId\":64779,\"journal\":{\"name\":\"半导体技术\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"半导体技术\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2002.1001568\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001568","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

比较了两种主要的CMP概念,即柔性抛光表面(用于线性带式CMP)和刚性抛光表面(硬压板旋转和轨道CMP)概念在工艺稳定性、均匀性、平面化效率等性能特征方面的差异。一个新的CMP特性,归一化去除功(Normalized Removal Work),一个单位的有源衬垫面积(NRW=(厚度去除)/(有源衬垫面积),[A/sq]去除的晶圆层材料量。英寸]),用于分析和比较概念。NRW显示了在一个单位垫块面积上有多少被移除的物质被转移和重新沉积。它影响CMP过程的各个方面。低NRW对CMP有利,高NRW对CMP不利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Flexible polishing surface (FPS) vs rigid polishing surface (RPS) in CMP: pros and cons
Two major conceptual CMP approaches, namely flexible polishing surface (utilized in linear belt CMP) and rigid polishing surface (hard platen rotary and orbital CMP) concepts are compared with regard to process stability, uniformity, planarization efficiency and other performance features. A new CMP characteristic, Normalized Removal Work, the amount of wafer layer material removed by a unit of active pad area (NRW=(Thickness removed)/(Active pad area), [A/sq. inch]), is used to analyze and compare the concepts. The NRW shows how much of the removed material is transferred and redeposited over a unit of pad area. It influences all aspects of the CMP process. Low NRW is good for CMP, high NRW is bad for CMP.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
8436
期刊最新文献
A manufacturable shallow trench isolation process for sub-0.2 um DRAM technologies Ultra-dilute silicon wafer clean chemistry for fabrication of RF microwave devices Planarization yield limiters for wafer-scale 3D ICs Statistical modeling and analysis of wafer test fail counts An approach for improving yield with intentional defects
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1