高级finfet中DC - GHz设计优化的自热温度行为分析

2019 Symposium on VLSI Technology Pub Date : 2019-06-09 DOI:10.23919/VLSIT.2019.8776496

S. L. Liu, J. Horng, Amit Akundu, Y. Hsu, B. Lien, S. F. Liu, C. W. Chang, H. Hsieh, D. Huang, Y. C. Peng, Sally Liu, Mark Chen

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引用次数: 4

摘要

本文提出了一种三维热阻抗网络方法来研究传统模型难以分析的先进FinFET的自热效应:(i)用于大电流驱动器的大型FinFET器件的温度分布分析;(ii) GHz数字电路中热积累的瞬态热建模;(iii)研究降低FinFET自热温度的布局方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-Heating Temperature Behavior Analysis for DC - GHz Design Optimization in Advanced FinFETs

This paper presents a 3D thermal impedance network approach to study self-heating effects in advanced FinFETs that are difficult to be analyzed in conventional models: (i) temperature distribution analysis for large FinFET devices used in high current drivers (ii) transient thermal modeling for heat accumulation in GHz digital circuits, and (iii) investigation for layout methods to reduce FinFET self-heating temperature.

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2019 Symposium on VLSI Technology

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