D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi
{"title":"无障碍PVD Mo的可靠性","authors":"D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi","doi":"10.1109/IITC51362.2021.9537545","DOIUrl":null,"url":null,"abstract":"We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO<inf>2</inf>, LK3.0, SiCO and Si<inf>3</inf>N<inf>4</inf> films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO<inf>2</inf>, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si<inf>3</inf>N<inf>4</inf> films.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"67 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reliability of Barrierless PVD Mo\",\"authors\":\"D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi\",\"doi\":\"10.1109/IITC51362.2021.9537545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO<inf>2</inf>, LK3.0, SiCO and Si<inf>3</inf>N<inf>4</inf> films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO<inf>2</inf>, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si<inf>3</inf>N<inf>4</inf> films.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"67 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537545\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO2, LK3.0, SiCO and Si3N4 films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO2, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si3N4 films.
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