减少废料:控制SC1中的氧化物损失

半导体技术 Pub Date : 2002-08-07 DOI:10.1109/ASMC.2002.1001600

Heather Maines, M. Rathmell, L. Veldhuis

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引用次数: 2

摘要

在这项研究中，我们表征了SC1中热二氧化硅、等离子体增强CVD四正硅酸盐(PECVD TEOS)和掺磷硅酸盐玻璃(PSG)蚀刻速率与温度和浓度的关系。我们还测量了SC1中植入屏氧化物损耗对晶体管电压导通的影响，并阐明了减少SC1中氧化物损耗造成的废料的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reduce scrap: control oxide loss in SC1

In this study, we characterize thermal silicon dioxide, plasma enhanced CVD tetraorthosilicate oxide (PECVD TEOS) and phosphorous doped silicate glass (PSG) etch rates in SC1 as a function of temperature and concentration. We also measure the effect of implant screen oxide loss in SC1 on transistor voltage turn on and elucidate ways to reduce scrap due to oxide loss in SC1.

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半导体技术

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